2SK3863(2006) 데이터 시트보기 (PDF) - Toshiba
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2SK3863 Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
ID = ±10 μA, VGS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
10 V
ID = 2.5 A VOUT
VGS
0V
ton
RL =
15 Ω
90 Ω
tf
VDD ∼− 225 V
toff
Duty <= 1%, tw = 10 μs
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 5 A
Qgd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
2SK3863
Min Typ. Max Unit
⎯
⎯
±10
μA
±30 ⎯
⎯
V
⎯
⎯
100
μA
500 ⎯
⎯
V
2.0
⎯
4.0
V
⎯ 1.35 1.50 Ω
1.4 2.8
⎯
S
⎯ 550 ⎯
⎯
7
⎯
pF
⎯
70
⎯
⎯
10
⎯
⎯
20
⎯
ns
⎯
10
⎯
⎯
50
⎯
⎯
16
⎯
⎯
10
⎯
nC
⎯
6
⎯
Min Typ. Max Unit
⎯
⎯
5
A
⎯
⎯
20
A
⎯
⎯
−1.7
V
⎯ 1400 ⎯
ns
⎯
9
⎯
μC
Marking
K3863
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06
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