2SK3472(2002) 데이터 시트보기 (PDF) - Toshiba
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2SK3472 Datasheet PDF : 6 Pages
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2SK3472
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
±10
µA
±30
V
IDSS
V (BR) DSS
Vth
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
100
µA
450
V
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 0.5 A
4.0
4.6
Ω
Yfs
Ciss
Crss
VDS = 10 V, ID = 0.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
0.3
0.8
S
180
2
pF
Coss
20
tr
VG1S0 V
0V
ton
tf
ID = 0.5 A VOUT
7
15
RL = 400 Ω
ns
30
toff
Duty <= 1%, tw = 10 µs VDD ∼− 200 V
70
Qg
Qgs
VDD ∼− 360 V, VGS = 10 V, ID = 1 A
Qgd
5
3
nC
2
Source-Drain Ratings and Characteristics (Tc = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
1
A
2
A
−1.7
V
350
µs
1.3
µC
Marking
K3472
※
Type
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-03-04
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