2SK3404
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
ID = 20 A
25
VGS = 4.5 V
20
7.0 V
15
10 V
10
5
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
4.5 V
10
0V
1
0.1
0.01
0
0.5
1
1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
tf
10
tr
td(off)
td(on)
VDD = 15 V
VGS = 10 V
1
RG = 10 Ω
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
12
ID = 40 A
25
20
VDD = 24 V
15 V
6V
8
VGS
15
10
4
5
VDS
0
0
0
10
20
30
QG - Gate Charge - nC
4
Data Sheet D14638EJ2V0DS