RMDA20420 데이터 시트보기 (PDF) - Raytheon Company
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RMDA20420 Datasheet PDF : 13 Pages
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RMDA20420
RF Components 20-42 GHz General Purpose MMIC Amplifier
ADVANCED INFORMATION
Schematic of
Application
Circuit
10,000pF
Drain Supply (Vd)
(Connect to both Vd1 & Vd3)
Bond Wire Ls
100pF
Note: The Input does not have a
DC blocking capacitor. It is
terminated with a 50 Ohm
resistor to ground on chip and it
is isolated from any DC bias.
MMIC Chip
RF IN
Vd1 Vg2 Vd2
Vd3
Vd4
alt
RF OUT
Vg1
Vg2
Vg3 Vg4
Ground
(Back of Chip) 100pF
Bond Wires Ls
Recommended
Assembly and
Bonding
Diagram
Gate Supply (Vg)
(VGA and/or VGB)
10,000pF
Note: For currents > 370 mA connect
all four drain pads to the 100pF
capacitor.
5mil Thick
Alumina
50-Ohm
10,000pF
Vd1
Vg2 alt
Vd
(Positive) Interchangeable Vd Bond Pads
(Do not use Vd2)
100pF
Vd2
Vd3
Vd4
Die-Attach
80Au/20Sn
5 mil Thick
Alumina
50-Ohm
RF
Input
L< 0.015”
4 places
Vg1
Vg2
Vg3
Vg4
RF
Output
2 mil Gap
100pF
Vg
(Negative)
Interchangeable Vg Bond Pads
10,000pF
L< 0.015”
Notes:
1.
2.
3.
4.
5.
6.
Die-attach with 80Au/20Sn
Use 0.003” x 0.0005” gold ribbon for bonding.
RF input and output bonds should be less than 0.015” long with stress relief.
For currents > 370 mA connect all drain pads (Vd1, Vd3, & Vd4) to the 100 pF capacitor.
Back of chip is DC and RF ground.
Do not use Vd2 pad for drain bias connection
www.raytheonrf.com
Specifications are based on most current or latest revision.
Revised February 6, 2003
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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