K3062 데이터 시트보기 (PDF) - NEC => Renesas Technology

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K3062

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

PACKAGE DRAWINGS (Unit : mm)

1)TO-220AB (MP-25)

10.6 MAX.

10.0

φ 3.6±0.2

4.8 MAX.

1.3±0.2

4

123

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2.8±0.2

2SK3062

2)TO-262 (MP-25 Fin Cut)

4.8 MAX.

(10)

1.3±0.2

4

123

1.3±0.2

0.75±0.3

2.54 TYP.

0.5±0.2

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2.8±0.2

3)TO-263 (MP-25ZJ)

(10)

4

4.8 MAX.

1.3±0.2

1.4±0.2

0.7±0.2

(0.5R()0.8R)

2.54 TYP. 1 2 3 2.54 TYP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4) TO-220SMD(MP-25Z)Note

(10)

4

4.8 MAX.

1.3±0.2

1.4±0.2

1.0±0.3

(0.5(0R.)8R)

2.54 TYP. 1 2 3 2.54 TYP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Note This Package is produced only in Japan.

Remark

The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device actually used,

an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

Data Sheet D13101EJ2V0DS

7

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