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2SJ542 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SJ542
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ542 Datasheet PDF : 9 Pages
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2SJ542
Silicon P Channel MOS FET
High Speed Power Switching
Features
•
Low on-resistance
R
DS(on)
= 0.050
Ω
typ.
•
Low drive current.
•
4V gate drive devices.
•
High speed switching.
Outline
TO–220AB
ADE-208-591B (Z)
3rd. Edition
Jun 1998
D
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
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