2SJ280 L , 2SJ280 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V(BR)DSS –60
—
voltage
—
V
ID = –10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS ±20
—
—
V
IG = ±200 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS
—
—
–250 µA VDS = –50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off)
–1.0 —
–2.25 V
ID = –1 mA, VDS = –10 V
———————————————————————————————————————————
Static drain to source on state RDS(on)
resistance
—
0.033 0.043 Ω ID = –15 A
VGS = –10 V *
————————————————————————
—
0.045 0.06 Ω ID = –15 A
VGS = –4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs|
17
25
—
S
ID = –15 A
VDS = –10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
3300 —
pF VDS = 10 V
————————————————————————————————
Output capacitance
Coss
—
1500 —
pF VGS = 0
————————————————————————————————
Reverse transfer capacitance Crss
—
480
—
pF f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
—
30
—
ns ID = –15 A
————————————————————————————————
Rise time
tr
—
170
—
ns VGS = –10 V
————————————————————————————————
Turn–off delay time
td(off)
—
500
—
ns RL = 2 Ω
————————————————————————————————
Fall time
tf
—
390
—
ns
———————————————————————————————————————————
Body–drain diode forward
VDF
voltage
—
–1.5 —
V
IF = –30 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
trr
recovery time
—
200
—
ns IF = –30 A, VGS = 0,
diF / dt = 50 A / µs
———————————————————————————————————————————
* Pulse Test