2SJ186 데이터 시트보기 (PDF) - Renesas Electronics
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2SJ186 Datasheet PDF : 9 Pages
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2SJ186
Static Drain to Source on State Resistance
vs. Temperature
24
Pulse Test
VGS = –10 V
20
–1 A
16
12
–0.5 A
ID = –0.2 A
8
4
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
–0.01 –0.02
Pulse Test
Ta = 25°C
di / dt = 50 A / µs
VGS = 0
–0.05 –0.1 –0.2 –0.5 –1
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –100 V
–200
–150 V
–4
VDS
–200 V
–400
–8
VDD = –200 V
–600
VGS
–150 V
–100 V
–12
–800
–1000
0
–16
ID = –0.5 A
–20
2
4
6
8 10
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
1
0.5
Tc = –25°C
0.2
25°C
0.1
75°C
0.05
0.02
0.01
–0.01 –0.02
VDS = –20 V
Pulse Test
–0.05 –0.1 –0.2 –0.5 –1
Drain Current ID (A)
Capacitance vs. Drain to Source Voltage
1000
300
VGS = 0
f = 1 MHz
100
Ciss
30
Coss
10
3
Crss
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
100
50
tf
20
td(off)
10
td(on)
5
tr
2 VGS = –10 V, VDD = –30 V
PW = 2 µs, duty ≤ 1 %
1
–0.01 –0.02 –0.05 –0.1 –0.2
–0.5 –1
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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