2SJ304 데이터 시트보기 (PDF) - Toshiba
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2SJ304 Datasheet PDF : 6 Pages
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2SJ304
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ304
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 8.0 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = −60 V)
l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VGSS
ID
IDP
PD
Tch
Tstg
±20
V
−14
A
−56
40
W
150
°C
−55~150
°C
Thermal Characteristics
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
3.125
62.5
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-06-24
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