2SD768 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SD768 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; RBE=;
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=6mA
VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=60mA
VBEsat-1 Base-emitter saturation voltage
IC=3A; IB=6mA
VBEsat-2 Base-emitter saturation voltage
IC=6A; IB=60mA
ICBO
Collector cut-off current
VCB=120V; IE=0
ICEO
Collector cut-off current
hFE
DC current gain
Switching times
VCE=100V; RBE=;
IC=3A ; VCE=3V
ton
Turn-on time
toff
Turn-off time
IC=3A;IB1=-IB2=6mA
Product Specification
2SD768
MIN TYP. MAX UNIT
120
V
7
V
1.5
V
3.0
V
2.0
V
3.5
V
100
µA
10
µA
1000
20000
1.0
µs
3.0
µs
2
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