2SD745 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD745 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD745/745A/745B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD745
2SD745A IC=25mA; IB=0
2SD745B
VCEsat Collector-emitter saturation voltage IC=5A;IB=0.5 A
VBEsat Base-emitter saturation voltage
IC=5A;IB=0.5 A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VCB=140V; IE=0
VEB=3V; IC=0
IC=50mA ; VCE=5V
IC=2A ; VCE=5V
fT
Transition frequency
IC=0.2A ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
140
150
V
160
1.5
V
2.0
V
50
μA
50
μA
20
40
200
15
MHz
270
pF
hFE-2 classifications
S
R
Q
40-80 60-120 100-200
2
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