2SD2401Q 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SD2401Q Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=30mA; IB=0
VCEsat Collector-emitter saturation voltage IC=7 A;IB=7m A
VBEsat Base-emitter saturation voltage
IC=7 A;IB=7m A
ICBO
Collector cut-off current
VCB=160V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=7A ; VCE=4V
fT
Transition frequency
IC=2A ; VCE=12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=10Ω
IB1=- IB2=7mA
VCC=70V
hFE classifications
O
P
5000-12000 6500-20000
Y
15000-30000
www.jmnic.com
2SD2401
MIN TYP. MAX UNIT
150
V
2.5
V
3.0
V
100
μA
100
μA
5000
55
MHz
95
pF
0.5
μs
10.0
μs
1.1
μs
JMnic
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