2SD2225 데이터 시트보기 (PDF) - Panasonic Corporation
부품명
상세내역
일치하는 목록
2SD2225 Datasheet PDF : 3 Pages
| |||
Transistor
2SD2225
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1473
s Features
q High collector to emitter voltage VCEO of 120V.
q Optimum for low-frequency driver amplification.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage VCEO
120
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45+–00..105
(HW type)
Parameter
Symbol
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VCEO
VEBO
hFE1*1
hFE2
hFE3
VCE(sat)
VBE(sat)
fT
Cob
Conditions
min
IC = 0.1mA, IB = 0
120
IE = 10µA, IC = 0
5
VCE = 10V, IC = 150mA*2
90
VCE = 5V, IC = 500mA*2
50
VCE = 5V, IC = 100mA*2
100
IC = 300mA, IB = 30mA*2
IC = 300mA, IB = 30mA*2
VCB = 10V, IE = –50mA, f = 200MHz*2
VCB = 10V, IE = 0, f = 1MHz
typ max Unit
V
V
330
0.15
1
V
0.9
1.2
V
200
MHz
11.5
20
pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
hFE1
90 ~ 155 130 ~ 220
S
185 ~ 330
1
Share Link: 