P4C150-35LMB 데이터 시트보기 (PDF) - Performance Semiconductor
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P4C150-35LMB Datasheet PDF : 8 Pages
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P4C150
MAXIMUM RATINGS(1)
Symbol
Parameter
Value Unit
VCC Power Supply Pin with – 0.5 to +7 V
Respect to GND
V
TERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
– 0.5 to
V +0.5 V
CC
TA
Operating Temperature – 55 to +125 °C
Symbol Parameter
T
BIAS
Temperature Under
Bias
TSTG Storage Temperature
PT
Power Dissipation
IOUT
DC Output Current
Value Unit
– 55 to +125 °C
– 65 to +150 °C
1.0
W
50
mA
RECOMMENDED OPERATING
CONDITIONS
Grade(2)
Commercial
Ambient Temp
0˚C to 70˚C
Gnd
VCC
0V 5.0V ± 10%
Military
-55˚C to +125˚C 0V 5.0V ± 10%
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Symbol Parameter
Conditions Typ. Unit
CIN
COUT
Input Capacitance VIN = 0V
Output Capacitance VOUT= 0V
5 pF
7 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage (2)
Symbol
Parameter
VOH Output High Voltage
(TTL Load)
VOL Output Low Voltage
(TTL Load)
V
IH
Input High Voltage
V Input Low Voltage
IL
I
Input Leakage Current
LI
Test Conditions
IOH = –4 mA, VCC = Min.
IOL = +8 mA, VCC = Min
V = Max., V = GND to V
CC
IN
CC
P4C147
Unit
Min.
Max.
2.4
V
2.2
–0.5(3)
–5
0.4
V
VCC =+0.5 V
0.8
V
+5
µA
ILO Output Leakage Current
VCC = Max., CS = VIH, VOUT = GND to VCC
–5
+5
µA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
ICC
Parameter
Dynamic Operating Current
Temperature
Range
Commercial
Military
Unit
-10 -12 -15 -20 -25 -35
130 130 120 115 100 N/A mA
N/A N/A 145 135 125 120 mA
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this
specification is not implied. Exposure to MAXIMUM rating condi-
tions for extended periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than – 3.0V and
– 100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
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