D1453 데이터 시트보기 (PDF) - SavantIC Semiconductor

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D1453

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1453

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200mA; IC=0

VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=2.5A; IB=0.8A

ICES

Collector cut-off current

VCE=1500V; RBE==

hFE

DC current gain

IC=0.3A ; VCE=5V

VF

Diode forward voltage

IF=3A

tf

Fall time

ICP=2.75A; IB1=0.6A; IB2?-1.3A

MIN TYP. MAX UNIT

6

V

5.0

V

1.5

V

0.5 mA

6

2.2

V

0.8

µs

2

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