D1425 데이터 시트보기 (PDF) - SavantIC Semiconductor

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D1425

Silicon NPN Power Transistor

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1425

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200mA; IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A

VBEsat

Base-emitter saturation voltage

IC=2A; IB=0.6A

ICBO

Collector cut-off current

VCB=500V; IE=0

hFE

DC current gain

fT

Transition freuqency

COB

Output capacitance

VF

Diode forward voltage

tf

Fall time

IC=0.5A ; VCE=5V

IC=0.1A ; VCE=10V;f=1MHz

IE=0 ; VCB=10V;f=1.0MHz

IF=2.5A

IC=2A;IB1=0.6A

MIN TYP. MAX UNIT

5

V

8.0

V

1.5

V

10

µA

8

3

MHz

95

pF

2.0

V

1.0

µs

2

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