D1420 데이터 시트보기 (PDF) - KEXIN Industrial

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D1420

NPN Silicon epitaxial Transistor

KEXIN Industrial 

SMD Type

Transistors

NPN Silicon epitaxial Transistor

2SD1420

Features

Low frequency power amplifier

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

*1 PW 10ms, duty cycle 20%

Symbol

Rating

Unit

VCBO

180

V

VCEO

120

V

VEBO

5

V

IC

1.5

A

iC(peak)*1

3

A

PC*2

1

W

Tj

150

Tstg

-55 to 150

*2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)

Electrical Characteristics Ta = 25

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

DC current transfer ratio

hFE

Collector to emitter saturation voltage

Base to emitter voltage

VCE(sat)

VBE

Testconditons

IC = 1 mA, IE = 0

IC = 10mA, RBE =

IE= 1mA, IC = 0

VCB = 160 V, IE = 0

VCE = 5 V, IC = 0.15A

VCE = 5 V, IC = 0.5A

IC = 0.5A, IB = 50 mA,pulse

VCE = 5 V, IC = 0.15mA,pulse

hFE Classification

Marking

hFE

EA

60 120

EB

100 200

EC

160 320

Min Typ Max Unit

180

V

120

V

5

V

10 ìA

60

320

30

1.0 V

0.9 V

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