2SD1474 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1474 Datasheet PDF : 5 Pages
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Power Transistors
2SD1474
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity
• High emitter-base voltage (Collector open) VEBO
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
100
V
Collector-emitter voltage (Base open) VCEO
60
V
Emitter-base voltage (Collector open) VEBO
15
V
Collector current
IC
6
A
Peak collector current
ICP
12
A
Collector power
PC
40
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE
VCE(sat)
fT
ton
tstg
tf
IC = 25 mA, IB = 0
VCB = 100 V, IE = 0
VEB = 15 V, IC = 0
VCE = 4 V, IC = 1 A
IC = 5 A, IB = 0.1 A
VCE = 12 V, IC = 0.5 A, f = 10 MHz
IC = 5 A, IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
60
V
100 µA
100 µA
300
2 000
0.5
V
30
MHz
0.3
µs
1.5
µs
0.6
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE
300 to 1 200 800 to 2 000
Publication date: February 2003
SJD00197BED
1
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