2SC5027 데이터 시트보기 (PDF) - Unisonic Technologies

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2SC5027

HIGH VOLTAGE AND HIGH RELIABILITY

Unisonic Technologies 

2SC5027

TYPICAL CHARACTERISTICS

Static Characteristic

Collector Current vs. Collector-Emitter Voltage

4.0

3.6

3.2

2.8

2.4

IB=150 mA

2.0

1.6

IB=100 mA

1.2

IB =50 mA

0.8

IB=10 mA

0.4

0.0

0 1 2 3 4 5 6 7 8 9 10

Collector-Emitter Voltage, VCE (V)

Collector Current vs. Base-Emitter Voltage

4.0

VCE=5V

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Base-Emitter Voltage, VBE (V)

1000

DC Current Gain vs. Collector Current

VCE =5V

100

10

1

100us

0.01

0.1

1ms

1

10

Collector Current, IC (A)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

NPN SILICON TRANSISTOR

Switching Time

Time vs. Collector -Emitter Voltage

10

1

0.1

0.01

Vcc=400V

5.IB1= - 2.5.IB2=Ic

1ms

0.1

1

10

Collector-Emitter Voltage, VCE (V)

Saturation Voltage vs. Collector Current

10

Ic=5IB

1

VBE(SAT)

0.1

VCE(SAT)

0.01

0.01

100us

0.1

1ms

1

10

Collector Current, IC (A)

Safe Operating Area

Collector Current vs. Collector-Emitter Voltage

100

ICP (MAX )

10

IC(MAX)(Continuous )

1

DC

0.1

1ms

10ms

0.01

1E-s

1

10

100

1000

Collector-Emitter Voltage, VCE (V)

5000

3 of 4

QW-R203-027,C

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