2SC4764 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4764 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=300mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
VF
Diode forward voltage
IF=4A
fT
Transition frequency
IC=0.1A ; VCE=10V
Switching times resistive load
ts
Storage time
tf
Fall time
ICP=4A;IB1=0.8A
IB2=-1.6A; RL=51Ω
Product Specification
2SC4764
MIN TYP. MAX UNIT
5
V
5
V
1.5
V
1
mA
83
250 mA
8
12
5
9
170
pF
1.2
1.8
V
1
3
MHz
1.6
2.5
μs
0.1
0.2
μs
2
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