C4301 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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C4301

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=3A;IB=0.6A

VBEsat Base-emitter saturation voltage

IC=3A;IB=0.6A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=3A ; VCE=4V

fT

Transition frequency

IE=-1A ; VCE=12V

COB

Output capacitance

VCB=10V;f=1MHz

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=3A;IB1=0.45A;

IB2=-1.5A;

RL=83Ω;VCC=250V

Product Specification

2SC4301

MIN TYP. MAX UNIT

800

V

0.5

V

1.2

V

100 μA

100 μA

10

30

6

MHz

105

pF

1

μs

5

μs

1

μs

2

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