C4517 데이터 시트보기 (PDF) - Inchange Semiconductor
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C4517 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4517 2SC4517A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
550
V
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
0.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=1A; IB=0.2A
VCB=800V; IE=0
VEB=7V; IC=0
1.2
V
100
μA
100
μA
hFE
DC current gain
IC=1A ; VCE=4V
10
30
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
35
pF
fT
Transition frequency
固IN电C半H导AN体GE SEMICONDUTOR Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IE=-0.25A ; VCE=12V
IC=1.0A IB1=0.15A
IB2=-0.45A
VCC=250V ,RL=250Ω
6
0.7
4.0
0.5
MHz
μs
μs
μs
2
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