C3910 데이터 시트보기 (PDF) - Inchange Semiconductor

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C3910

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3910

DESCRIPTION

·High Speed Switching

·High Collector-Base Breakdown Voltage-

: V(BR)CEO= 800V(Min)

·Good Linearity of hFE

APPLICATIONS

·Designed for high speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

800

V

VCEO

Collector-Emitter Voltage

500

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

30

A

IBB

Base Current-Continuous

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

5

A

150

W

3.5

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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