C3940Q 데이터 시트보기 (PDF) - Panasonic Corporation
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C3940Q Datasheet PDF : 4 Pages
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Transistors
2SC3940, 2SC3940A
Silicon NPN epitaxial planar type
For low-frequency output amplification and driver amplification
Complementary to 2SA1534, 2SA1534A
5.0±0.2
Unit: mm
4.0±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat)
0.7±0.1
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SC3940 VCBO
30
V
(Emitter open)
2SC3940A
60
Collector-emitter voltage 2SC3940 VCEO
25
V
(Base open)
2SC3940A
50
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.45+–00..12
(1.27)
(1.27)
0.45+–00..115
123
1: Emitter
2: Collector
2.54±0.15
3: Base
TO-92NL-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage
2SC3940 VCBO IC = 10 µA, IE = 0
30
(Emitter open)
2SC3940A
60
Collector-emitter voltage 2SC3940 VCEO IC = 2 mA, IB = 0
25
(Base open)
2SC3940A
50
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
Forward current transfer ratio *1
hFE1 *2 VCE = 10 V, IC = 500 mA
85
hFE2 VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage*1 VCE(sat) IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage*1
VBE(sat) IC = 500 mA, IB = 50 mA
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
Typ Max
0.1
340
0.2 0.4
0.85 1.20
200
11 20
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170 120 to 240 170 to 340
Publication date: March 2003
SJC00150BED
1
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