C3904 데이터 시트보기 (PDF) - Panasonic Corporation
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C3904 Datasheet PDF : 2 Pages
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Transistor
2SC3904
Silicon NPN epitaxial planer type
For 2GHz band low-noise amplification
s Features
q High transition frequency fT.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage VCEO
10
V
Emitter to base voltage
VEBO
2
V
Collector current
IC
65
mA
Collector power dissipation PC
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 3S
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
ICBO
IEBO
hFE
fT
Cob
| S21e |2
GUM
NF
Conditions
VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 8V, IC = 20mA
VCE = 8V, IC = 20mA, f = 0.8GHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 20mA, f = 1.5GHz
VCE = 8V, IC = 20mA, f = 1.5GHz
VCE = 8V, IC = 7mA, f = 1.5GHz
min
typ
max Unit
1
µA
1
µA
50
120 300
7.0
8.5
GHz
0.6
1
pF
7
9
dB
10
dB
2.2
3
dB
1
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