2SC3551 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC3551

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A

VBEsat Base-emitter saturation voltage

IC=2A ;IB=0.4A

ICBO

Collector cut-off current

VCB=900V IE=0

IEBO

Emitter cut-off current

VEB=10V; IC=0

hFE

DC current gain

IC=2A ; VCE=5V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=3A; RL=100Ω

IB1=0.6A; IB2=-1.2A

Product Specification

2SC3551

MIN TYP. MAX UNIT

800

V

900

V

10

V

1.0

V

1.5

V

1.0

mA

1.0

mA

10

1.0

μs

4.0

μs

0.8

μs

2

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