C3507 데이터 시트보기 (PDF) - Inchange Semiconductor
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C3507 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3507
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=50mH
800
V
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A
1.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=3A ;IB=0.6A
VCB=1000V; IE=0
VEB=7V; IC=0
1.5
V
50 μA
50 μA
hFE
DC current gain
IC=3A ; VCE=5V
6
fT
Transition frequency
IC=0.5A ; VCE=5V;f=1MHz
6
MHz
Switching times
固IN电C半H导AN体GE SEMICONDUCTOR ton
Turn-on time
1.0
ts
Storage time
IC=3A; VCC=250V
IB1=0.6A ,IB2=-1.2A
2.5
tf
Fall time
0.5
μs
μs
μs
2
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