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2SC3486

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3486

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞

800

V

V(BR)CBO Collector-base breakdown voltage

IC=5mA ;IE=0

1500

V

V(BR)EBO Emitter-base breakdown voltage

IE=5mA ;IC=0

7

V

VCEsat Collector-emitter saturation voltage IC=5A; IB=1.2A

5.0

V

VBEsat Base-emitter saturation voltage

IC=5A; IB=1.2A

1.5

V

ICBO

Collector cut-off current

VCB=800V; IE=0

10

μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

1

mA

hFE

DC current gain

IC=1A ; VCE=5V

8

固IN电C半H导AN体GE SEMICONDUCTOR fT

Transition frequency

Switching times

tstg

Storage time

tf

Fall time

IC=1A ; VCE=10V

IC=5A;RL=40Ω

IB1=1A; IB2=-2A

3

MHz

3.0 μs

0.3 μs

2

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