2SC2859 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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2SC2859

Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SC2859

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0

35

V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=B 0

30

V

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=35V,IE=0

0.1 μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1 μA

DC current gain

VCE=1V,IC=100mA

70

400

hFE

VCE=6V,IC=400mA

25

Collector-emitter saturation voltage VCE(sat)

IC=100mA, IB=B 10mA

0.1 0.25 V

Collector output capacitance

Cob

Transition frequency

fT

CLASSIFICATION OF hFE(1)

VCB=6V,IE=0,f=1MHz

VCE=10V, IC= 1mA

7

pF

300

MHz

Rank

Range

O

70-140

Y

120-240

G

200-400

Document number: BL/SSSTC100

Rev.A

www.galaxycn.com

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