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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

2SC2859 데이터 시트보기 (PDF) - Toshiba

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2SC2859 Datasheet PDF : 3 Pages
1 2 3
2SC2859
TOSHIBA Transistor Silicon NPN Epitaxial (PCT process)
2SC2859
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Unit: mm
Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
Complementary to 2SA1182.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
35
V
30
V
5
V
500
mA
50
mA
150
mW
125
°C
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
Test Condition
VCB = 35 V, IE = 0
VEB = 5 V, IC = 0
VCE = 1 V, IC = 100 mA
VCE = 6 V, IC = 400 mA
IC = 100 mA, IB = 10 mA
VCE = 1 V, IC = 100 mA
VCE = 6 V, IC = 20 mA
VCB = 6 V, IE = 0, f = 1 MHz
Note: hFE (1) classification
hFE (2) classification
O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
O: 25 min, Y: 40 min, GR: 70 min
( ) marking symbol
Marking
Min Typ. Max Unit
0.1
μA
0.1
μA
70
400
25
0.1 0.25
V
0.8
1.0
V
300 MHz
7
pF
1
2007-11-01

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