C1214 데이터 시트보기 (PDF) - Renesas Electronics

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C1214

Silicon NPN Epitaxial

Renesas Electronics 

2SC1214

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

50

Collector to emitter breakdown voltage V(BR)CEO

50

Emitter to base breakdown voltage

V(BR)EBO

4

Collector cutoff current

DC current transfer ratio

ICBO

—

hFE*1

60

hFE

10

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Note: 1. The 2SC1214 is grouped by hFE as follows.

B

C

D

60 to 120 100 to 200 160 to 320

Typ

—

—

—

—

—

—

0.2

0.64

Max

—

—

—

0.5

320

—

0.6

—

Unit

V

V

V

µA

V

V

(Ta = 25°C)

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IE = 0

VCE = 3 V, IC = 10 mA

VCE = 3 V, IC = 500 mA

(pulse test)

IC = 150 mA, IB = 15 mA

(Pulse test)

VCE = 3 V, IC = 10 mA

Rev.2.00 Aug 10, 2005 page 2 of 4

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