C1213(2011) 데이터 시트보기 (PDF) - Renesas Electronics

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C1213
(Rev.:2011)

Silicon NPN Epitaxial

Renesas Electronics 

2SC1213, 2SC1213A

Preliminary

Electrical Characteristics

Item

Collector to base

breakdown voltage

Collector to emitter

breakdown voltage

Emitter to base

breakdown voltage

Collector cutoff current

DC current transfer ratio

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE*1

hFE

2SC1213

Min Typ Max

35

—

—

35

—

—

4

—

—

—

—

0.5

60

— 320

10

—

—

2SC1213A

Min Typ Max

50

—

—

50

—

—

4

—

—

—

—

0.5

60

—

320

10

—

—

Collector to emitter

saturation voltage

VCE(sat)

—

0.2

0.6

—

0.2

0.6

Base to emitter voltage

VBE

— 0.64 —

— 0.64 —

Notes: 1. The 2SC1213 and 2SC1213A are grouped by hFE as follows.

2. Pulse test

B

C

D

60 to 120 100 to 200 160 to 320

(Ta = 25°C)

Unit

Test conditions

V IC = 10 μA, IE = 0

V IC = 1 mA, RBE = ∞

V IE = 10 μA, IC = 0

μA VCB = 20 V, IE = 0

VCE = 3 V, IC =10 mA

VCE = 3 V,

IC = 500 mA*2

V IC = 150 mA,

IB = 15 mA*2

V VCE = 3 V, IC = 10 mA

R07DS0431EJ0300 Rev.3.00

Jun 07, 2011

Page 2 of 4

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