C1214 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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C1214

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC1214

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

50

V

50

V

4

V

500

mA

600

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 50

—

voltage

Collector to emitter breakdown V(BR)CEO 50

—

voltage

Emitter to base breakdown

V(BR)EBO

4

—

voltage

Collector cutoff current

DC current transfer ratio

I CBO

—

—

hFE*

60

—

hFE

10

—

Collector to emitter saturation VCE(sat)

—

0.2

voltage

Base to emitter voltage

VBE

—

0.64

Note: 1. The 2SC1214 is grouped by hFE as follows.

B

C

D

60 to 120 100 to 200 160 to 320

Max

—

—

—

0.5

320

—

0.6

—

Unit

V

V

V

µA

V

V

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IE = 0

VCE = 3 V, IC = 10 mA

VCE = 3 V, IC = 500 mA

(pulse test)

IC = 150 mA, IB = 15 mA

(Pulse test)

VCE = 3 V, IC = 10 mA

See characteristic curves of 2SC1213.

2

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