2SB1697 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SB1697 Datasheet PDF : 3 Pages
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Transistors
zElectrical characteristic curves
−10
−1
−0.1
Ta=100°C
Ta=25°C
Ta=−40°C
1000
Ta=25°C
Ta=−40°C
100
Ta=100°C
−0.01
−0.001
0
−0.5
VCE=−2V
Ta=25°C
Pulsed
−1
−1.5
BASE TO EMITTER CURRENT : VBE (V)
VCE=−2V
Pulsed
10
−0.001 −0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter
Fig.2 DC current gain vs. collector current
propagation characteristics
2SB1697
10
VBE(sat)
1
0.1
Ta=−40°C
Ta=25°C
Ta=100°C
0.01
Ta=100°C
Ta=25°C
Ta=−40°C
VCE(sat)
0.001
0.01
0.1
IC/IB=20
Pulsed
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation
voltage vs.collector current
Base-emitter saturation
voltage vs.collector current
−1
Ta=25°C
Pulsed
−0.1
1000
Ta=25°C
VCE=−2V
f=100MHz
100
1000
Ta=25°C
IE=0A
f=1MHz
100
Cib
IC/IB=50
−0.01
IC/IB=20
0.01
−0.001
IC/IB=10
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation
voltage vs.collector current
10
0.001 0.01
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product vs.
emitter current
10
Cob
1
−0.1
−1
−10
−100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
Rev.A
2/2
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