B1478 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

일치하는 목록

B1478

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1478

DESCRIPTION

·High DC Current Gain-

: hFE = 2000(Min)@ IC= -2A

·Low Collector Saturation Voltage-

: VCE(sat) = -2.0V(Max.) @IC= 5A

·Complement to Type 2SD2237

APPLICATIONS

·Designed for power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-100

V

VEBO Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-8

A

60

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

Share Link: