B1470 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

일치하는 목록

B1470

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1470

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0

-160

V

VCEsat Collector-emitter saturation voltage IC=-7A ;IB=B -7mA

-3.0

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

ICEO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-7A ;IB=B -7mA

VCB=-160V; IE=0

VCE=-160V; IB=0

VEB=-5V; IC=0

-3.0

V

-100 μA

-100 μA

-100 μA

hFE-1

DC current gain

IC=-1A ; VCE=-5V

1000

hFE-2

DC current gain

IC=-7A ; VCE=-5V

3500

20000

fT

Transition frequency

IC=-0.5A ; VCE=-10V;f=1MHz

20

MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-7A ;IB1=-IB2=-7mA

VCC=-50V

1.0

μs

1.5

μs

1.2

μs

‹ hFE-2 classifications

Q

S

3500-10000 7000-20000

2

Share Link: