SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)CBO Collector-base breakdown voltage IC=-0.1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-2mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A;IB=-20m A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-5A;IB=-20m A
VCB=-100V; IE=0
VEB=-5V; IC=0
IC=-2A ; VCE=-3V
Product Specification
2SB1478
MIN TYP. MAX UNIT
-100
V
-100
V
-5
V
-2.0
V
-2.5
V
-10
µA
-2
mA
2000
20000
2