IRF820 데이터 시트보기 (PDF) - Intersil
부품명
상세내역
일치하는 목록
IRF820 Datasheet PDF : 7 Pages
| |||
IRF820
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF820
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
500
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
500
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
2.5
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
1.6
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
8.0
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
50
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
210
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V (Figure 10)
500
VGS(TH) VDS = VGS, ID = 250µA
2.0
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 2.5
IGSS VGS = ±20V
-
rDS(ON) ID = 1.4A, VGS = 10V (Figures 8, 9)
-
gfs
VDS ≥ 10V, ID = 2.0A (Figure 12)
1.5
td(ON) VDD = 250V, ID ≈ 2.5A, RGS = 18Ω, RL = 96Ω
-
tr
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
td(OFF)
-
tf
-
Qg(TOT) VGS = 10V, ID = 2.5A, VDS = 0.8 x Rated BVDSS
-
Ig(REF) = 1.5mA
Qgs
(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature
-
Qgd
-
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
COSS
-
CRSS
-
LD
Measured From the
Modified MOSFET
-
Contact Screw on Tab to Symbol Showing the
Center of Die
Internal Device
Measured From the Drain Inductances
-
Lead, 6mm (0.25in) From
D
Package to Center of Die
LD
LS
Measured From the Source
-
Lead, 6mm (0.25in) from
G
Header to Source Bonding
LS
Pad
S
RθJC
-
RθJA Free Air Operation
-
-
-
V
-
4.0
V
-
25
µA
-
250 µA
-
-
A
- ±100 nA
2.5 3.0
Ω
2.3
-
S
11 15
ns
11 18
ns
29 42
ns
12 18
ns
12
19
nC
2.5
-
nC
6.0
-
nC
360
-
pF
60
-
pF
10
-
pF
3.5
-
nH
4.5
-
nH
7.5
-
nH
-
2.5 oC/W
-
80 oC/W
4-246
Share Link: 