2SA878 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SA878 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA877
2SA878
IC=-0.1A ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
2SA877 VCB=-80V; IE=0
ICBO
Collector cut-off current
2SA878 VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-4V
COB
Output capacitance
IE=0 ; VCB=-10V; f=1.0MHz
fT
Transition frequency
IC=-1A ; VCE=-12V
Product Specification
2SA877 2SA878
MIN TYP. MAX UNIT
-80
V
-120
-6
V
-2.0
V
-0.1 mA
-0.1 mA
50
255
pF
15
MHz
2
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