2SA821 데이터 시트보기 (PDF) - Transys Electronics Limited
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2SA821 Datasheet PDF : 1 Pages
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Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA821 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 0.25 W (Tamb=25℃)
Collector current
ICM : -0.03 A
Collector-base voltage
V(BR)CBO : -210 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
Ic= -50µA , IE=0
IC= -0.1 mA , IB=0
IE= -50µA, IC=0
VCB=-150V, IE=0
VEB= -4.5 V , IC=0
VCE=-3 V, IC= -5mA
IC= -2mA, IB= -0.2mA
-210
-210
-5
56
MAX
-1
-1
270
-0.6
UNIT
V
V
V
µA
µA
V
Transition frequency
fT
VCE=-5V, IC= -2mA
30
MHz
Output capacitance
Cob
VCE=-10V,IE=0,f=1MHz
12
pF
CLASSIFICATION OF hFE
Rank
Range
N
56-120
P
82-180
Q
120-270
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