2SA608S 데이터 시트보기 (PDF) - Transys Electronics Limited

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2SA608S

Plastic-Encapsulated Transistors(PNP)

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92S Plastic-Encapsulated Transistors

2SA608S TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 300 mW (Tamb=25℃)

Collector current

ICM : -100 mA

Collector-base voltage

V(BR)CBO : -40 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92S

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

fT

Cob

Ic=-100µA, IE=0

Ic=-1mA, IB=0

IE=-100µA, IC=0

VCB=-25V, IE=0

VEB=-4V, IC=0

VCE=-6V, IC=-1mA

IC=-50mA, IB=-5mA

VCE=-6V, IC=-10mA

VCB=-6V, f=1MHz

-40

-30

-5

60

180

7

MAX UNIT

V

V

V

-1

µA

-1

µA

560

-0.5

V

MHz

pF

CLASSIFICATION OF hFE

Rank

D

Range

60-120

E

100-200

F

160-320

G

280-560

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