2SA1900 데이터 시트보기 (PDF) - TY Semiconductor

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2SA1900

Medium power transistor

TY Semiconductor 

SMD Type

Features

Low saturation voltage, typically VCE(sat) = ?0.15V at IC /

IB = ?500mA / ?50mA

PC=2W (on 40X40X0.7mm ceramic board)

IC

Product specification

2SA1900

Absolute Maximum Ratings Ta = 25

Parameter

Collector-emitter Voltage

Collector-base Voltage

Emitter-base Voltage

Collector current

Symbol

VCEO

VCBO

VEBO

IC

Collector power dissipation

PC

Jumction temperature

Tj

Storage temperature

Tstg

*1 Single pulse Pw=20ms, Duty=1/2

*2 When mounted on a 40X40X0.7mm seramic board.

Rating

-60

-50

-5

-1

-2

0.5

2

150

-55 to +150

Unit

V

V

V

A

A(Pulse) *1

W

W *2

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltae

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-Emitter Saturation Voltage

DC current transfer ratio

Transition frequency

Output Capacitance

Symbol

Testconditons

BVCBO IC = -50µA

BVCEO IC = -1mA

BVEBO IE = -50µA

ICBO VCB = -40V

IEBO VEB = -4V

VCE(sat) IC/IB = -500mA/-50mA

hFE VCE/IC = -3V/-0.5A

fT VCE = -5V , IE = 50mA , f=100MHz

Cob VCB = -10V , IE = 0A , f=1MHz

Min Typ Max Unit

-60

V

-50

V

-5

V

-0.1 ìA

-0.1 ìA

-0.4 V

120

270

150

MHz

20

pF

Marking

Marking

ALQ

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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