2SA1909 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SA1909 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
VcE(sat)
Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -UOV; IE= 0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
COB
Collector Output Capacitance
ft
Current-Gain—Bandwidth Product
Switching times
VEB= -6V; lc= 0
lc= -3A; Vce= -4V
IE=0; VCB=-10V;f=1MHz
IE=0.5A;VCE=-12V
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
|C=_5A, RL=12Q,
|B1= -iB2= -Q.5A, Vcc= -60V
hFE classifications
o
P
Y
50-100 70-140 90-180
2SA1909
MIN TYP. MAX UNIT
-140
V
-0.5
V
-10 u A
-10 u A
50
400
PF
20
MHz
0.17
vs
1.86
us
0.27
vs
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