2SA1962 데이터 시트보기 (PDF) - Fairchild Semiconductor

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2SA1962

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics* Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

Collector-Base Breakdown Voltage

BVCEO

Collector-Emitter Breakdown Voltage

BVEBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

hFE1

DC Current Gain

hFE2

DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(on)

Base-Emitter On Voltage

fT

Current Gain Bandwidth Product

Cob

Output Capacitance

* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%

IC=-5mA, IE=0

IC=-10mA, RBE=∞

IE=-5mA, IC=0

VCB=-230V, IE=0

VEB=-5V, IC=0

VCE=-5V, IC=-1A

VCE=-5V, IC=-7A

IC=-8A, IB=-0.8A

VCE=-5V, IC=-7A

VCE=-5V, IC=-1A

VCB=-10V, f=1MHz

Min.

-250

-250

-5

55

35

Typ.

60

-0.4

-1.0

30

360

Max.

-5.0

-5.0

160

-3.0

-1.5

Units

V

V

V

µA

µA

V

V

MHz

pF

Ordering Information

Part Number

2SA1962RTU

2SA1962OTU

FJA4213RTU

FJA4213OTU

Marking

A1962R

A1962O

J4213R

J4213O

Package

TO-3P

TO-3P

TO-3P

TO-3P

Packing Method

TUBE

TUBE

TUBE

TUBE

Remarks

hFE1 R grade

hFE1 O grade

hFE1 R grade

hFE1 O grade

© 2009 Fairchild Semiconductor Corporation

2SA1962/FJA4213 Rev. C

2

www.fairchildsemi.com

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