2SA2058 데이터 시트보기 (PDF) - Toshiba

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2SA2058

TOSHIBA Transistor Silicon PNP Epitaxial Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Rise time

Switching time

Storage time

Fall time

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

Cob

tr

tstg

tf

VCB = −20 V, IE = 0

VEB = −7 V, IC = 0

IC = −10 mA, IB = 0

VCE = −2 V, IC = −0.2 A

VCE = −2 V, IC = −0.6 A

IC = −0.6 A, IB = −20 mA

IC = −0.6 A, IB = −20 mA

VCB = −10 V, IE = 0, f = 1 MHz

See Figure 1 circuit diagram.

VCC ∼− −6 V, RL = 10 Ω

−IB1 = IB2 = −20 mA

Marking

2SA2058

Min Typ. Max Unit

⎯

⎯ −100 nA

⎯

⎯ −100 nA

−10 ⎯

⎯

V

200

⎯

500

125 ⎯

⎯

⎯

⎯ −0.19 V

⎯

⎯ −1.10 V

⎯

12

⎯

pF

⎯

50

⎯

⎯

115

⎯

ns

⎯

25

⎯

20 μs

IB2

IB1

IB1

Input

IB2

Duty cycle < 1%

VCC

Output

Figure 1 Switching Time Test Circuit &

Timing Chart

W

Lot code (year)

Dot: even year

No dot: odd year

Part No. (or abbreviation code)

M

Lot code (month)

2

2013-11-01

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