2SA2047 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SA2047

Medium power transistor (−30V, −0.5A)

ROHM Semiconductor 

Transistor

2SA2047

Medium power transistor (−30V, −0.5A)

2SA2047

!Features

1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA)

2) Low saturation voltage, typically

(Typ. : −150mV at IC = −100A, IB = −100mA)

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SC5729

!Applications

Small signal low frequency amplifier

High speed switching

!External dimensions (Units : mm)

UMT3

1.25

2.1

(1)Emitter

(2)Base

(3)Collector

0.1Min.

Each lead has same dimensions

Abbreviated symbol : UV

!Structure

PNP Silicon epitaxial planar transistor

!Packaging specifications

Type

Package

Code

Basic ordering unit (pieces)

2SA2047

Taping

T106

3000

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

Collector current

IC

ICP

Power dissipation

PC

Junction temperature

Tj

Range of storage temperature Tstg

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land

Limits

−30

−30

−6

−0.5

−1.0

200

150

−55~+150

Unit

V

V

V

A

A ∗1

mW ∗2

°C

°C

1/3

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