2SA1694 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SA1694 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
Silicon PNP Power Transistor
Product Specification
2SA1694
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Complement to Type 2SC4467
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-8
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-3
A
80
W
150
℃
-55~150
℃
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