JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10μA; IC=0
VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-5V
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-100mA ; VCE=-5V
fT
Transition frequency
IC=-0.1A ; VCE=5V
Product Specification
2SA1184
MIN TYP. MAX UNIT
-120
V
-5
V
-1.0
V
-1.0
V
-1
μA
-1
μA
80
240
120
MHz
2