2SA1170 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SA1170 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-1A
ICBO
Collector cut-off current
VCB=-200V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-8A ; VCE=-4V
fT
Transition frequency
IC=-1A ; VCE=-12V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
IC=-10A; IB1=- IB2=-1A
RL=4Ω;VCC=-40V
Product Specification
2SA1170
MIN TYP. MAX UNIT
-200
V
-6
V
-2.5
V
-100 μA
-100 μA
20
20
MHz
0.6
μs
0.9
μs
0.2
μs
2
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