2SA1108 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA1108

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A

VBE

Base-emitter on voltage

IC=-5A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-130V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-2A ; VCE=-5V

hFE-2

DC current gain

IC=-5A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-10V

Product Specification

2SA1108

MIN TYP. MAX UNIT

-130

V

-5

V

-2.0

V

-2.0

V

-5

μA

-5

μA

55

160

35

60

MHz

2

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